Model number： p-04

Reclaim Wafer

Cost Efficiency × Near-Pristine Quality

Scientia provides professional reclaim wafer services, specializing in 6-inch, 8-inch, and 12-inch wafer recycling and re-manufacturing. 
By leveraging advanced grinding, polishing, and inspection techniques, our reclaim wafers match the quality of new wafers in flatness, particle control, and metal purity—empowering customers to cut costs while ensuring high process reliability.

Key Features & Advantages

Full-Size Coverage

  • Available in 6-inch, 8-inch, and 12-inch sizes.
  • Comparable to new wafers with low particles, low metal contamination, and low haze—reducing costs while maintaining precision.

Excellent particle control

  • ≥26 nm particles: ≤200 ea
  • 12-inch wafer (typical): only 27 ea

High Flatness

  • GBIR average: 1.62 μm (≤10 μm)

Ultra-Low Metal Contamination

  • ≤1E9 atoms/cm²

Low Haze

  • Average: 0.051 ppm (≤0.2 ppm)

Stable Lead Times

  • Supported by in-house production and strict scheduling for consistent delivery.

Comparison

New Dummy Wafers vs. Reclaim Dummy Wafers (Scientia)

Category New Dummy Wafer Reclaim Dummy Wafer(Scientia)
Material 
Cost		 High (depending on wafer size and supplier) Low (cost savings over 50%)
Process 
Precision		 High (excellent surface quality and thickness uniformity) High (precision polishing and inspection, comparable to new wafer standards)
Environmental Impact Low (high energy consumption and carbon emissions in production) High (recycled and re-manufactured, reduces wafer waste and carbon footprint)
Lead Time Long (dependent on global silicon wafer supply chain) Short (in-house production with flexible scheduling, supports mass delivery)

12-inch Reclaim Wafers

Item Target Process Capability
AVG Sigma
Particle 26nm ≤ 200ea 27ea 19
37nm ≤ 100ea 20ea 15
45nm ≤ 80ea 15ea 11
65nm ≤ 60ea 9ea 8
90nm ≤ 40ea 6ea 5
120nm ≤ 30ea 4ea 4
GBIR(TTV) 10μm 1.62μm 0.61
Haze 0.2ppm 0.051 0.015
Cu, Na, Al, Ca, K, Cr, Fe, Ni, Zn, Li, Mg,
W, Mo, Co, K, Mn,TI (SURFACE)		 ≤ 1E10 atoms/cm² 1E9 atoms/cm²


 

6-inch & 8-inch Reclaim Wafers

Item Specification Remark
8 inch general test 6 inch general test 6 inch prime or specified
1. GENERAL CHARACTERISTICS
1.1 生長方式 Growth Method cz cz cz  
1.2 晶向 Crystal Orientation <100> + 1.0 degrees <100> + 1.0 degrees <100> + 1.0 degrees  
1.3 導電型 Conductivity Type P or N -Type P or N -Type P or N -Type  
1.4 摻雜劑 Dopant B/Ph B/Ph B/P/Sb/As  
1.5 邊緣不計 Nominal Edge Exclusion 3 or 5 mm 3 or 5 mm 3 or 5 mm  
2. ELECTRICAL CHARACTERISTICS
2.1 電阻率 Resistivity 0.1-1000hm-cm 0.1-1000hm-cm 0.001-1000hm-cm  
3. MECHANICAL CHARACTERISTICS
3.1 直徑 Diameter 200 + 0.5 mm 150 + 0.5 mm 50 + 0.5 mm  
3.2 V型槽深度 Notch Depth NOTCH NOTCH or FLAT NOTCH or FLAT  
3.3 V型槽晶向 Notch Orientation <110> + 1. O degrees <110> + 1. O degrees <110> + 1. O degrees  
3.4 倒角輪廓 Edge Shape SEMI S1 SEMI S1 SEMI  
3.5 厚度 Thickness >550um >500um >500um  
3.6 彎曲度 Bow <=60um <=60um <=50um  
3.7 翹曲度 Warp <=60um <=60um <=50um  
3.8 總厚度變化 TTV <=25um <=25um <=10um  
3.9 全貌平整度 TIR NA NA <=5um  
4. FRONT SURFACE CHEMISTRY
4.1 表面金屬 Surface Metal Contamination        
    Na, AI,Ca,K,Fe,Cr,Cr, Cr, Ni, Zn <=5xE10 /cm2 <=5xE10 /cm2 <=5xE10 /cm2  
5. FRONT SURFACE CRITERIA
5.1 刮傷 Scratches None None None  
5.2 顆粒要求 LPD particle >=0.2um <=30 <=30 <=30  
6. BACK SURFACE CRITERIA
6.1 亮點 Brightness (Gloss) Free Free Free  
6.2 划傷總長度 Scratches (micro) (total length) < Diameter < Diameter    
6.3 沾污 Stain Free Free Free  
6.4 崩邊 Chips Free Free Free  
Reclaim Wafer
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