Model number： p-05

SiC Epitaxial Wafers

Wide Bandgap × High-Performance Power Solutions

Scientia supplies silicon carbide (SiC) epitaxial wafers, leveraging SiC’s unique properties of wide bandgap, high thermal conductivity, and high breakdown voltage. These advantages ensure stable operation even under harsh conditions, making SiC wafers ideal for electric vehicles, high-efficiency power conversion, renewable energy systems, and industrial drives.
Currently, we offer 6-inch SiC epitaxial wafers (in mass production) and are developing 8-inch SiC epitaxial wafers. Custom options for epitaxial layer thickness, doping concentration, and structural design are available to support the development of next-generation high-performance power devices.

Production Specifications

  • 6-inch Epitaxial Wafers: In mass production
  • 8-inch Epitaxial Wafers: Under development
  • CVD epitaxial growth on SiC single-crystal substrates

Key Features & Advantages

  • Withstands high-voltage operation with stability
  • Reduces conduction losses and improves system efficiency
  • Superior thermal conductivity, enabling high-temperature operation
  • Compatible with a wide range of power semiconductor processes

Production Process

SiC Epitaxial Wafers

Looking for reliable SiC epitaxial wafers? Get in touch today with your application requirements (size, target voltage, device type) for tailored solutions and sample services.