CMP Slurry

Advantages of the CMP Slurry Series

• Comprehensive product line by material

  The portfolio is organized into four major series by material type, covering typical front-end applications such as ILD, STI, W plug, polysilicon gate and related structures:

  • Oxide Slurry

  • Tungsten Slurry

  • Polysilicon Slurry

  • Ceria Slurry

• Precise control of solid content and dilution ratio
  Using colloidal silica or ceria as the abrasive base, each formulation is designed with specific solid content and recommended dilution ratios. This enables operating conditions ranging from high removal rate to mild polishing, and allows flexible tuning according to process requirements.

• Balanced planarization and defect performance
  All slurry series are designed to deliver excellent planarization capability while maintaining low scratch and low defect levels, helping reduce downstream cleaning effort and rework cost.

• Stable dispersion and storage performance
  The slurries feature narrow particle size distribution and good suspension stability, minimizing sedimentation and large-particle agglomeration, and supporting long-term, continuous production.

CMP Slurry Product Series

Oxide Slurry – DI Series

Designed for oxide layer planarization, such as ILD and STI processes.

• DI-3000

  • Colloidal silica-based

  • Medium-to-high solid content, balancing removal rate and surface quality

  • Suitable for production lines that require higher throughput

• DI-3100

  • Colloidal silica-based, high solid content design

  • Provides faster removal rate and excellent planarization

  • Recommended as a main oxide CMP formulation

• DI-9000

  • Colloidal silica-based with low solid content, recommended for 5–10× dilution

  • Suitable for final polish steps or processes that are highly sensitive to surface defects

Tungsten Slurry – TN / TB Series

Formulated for tungsten plug fill, W plug and related tungsten processes, with emphasis on removal rate and selectivity control.

• TN-2000 / TN-2001

  • Fumed silica-based

  • Approx. 5% solid content, recommended for 2–4× dilution

  • Balances stable removal rate with cost-effectiveness

• TN-1020 / TN-2020

  • Colloidal silica-based formulations

  • Designed for lower selectivity and excellent planarization

  • Suitable for processes requiring precise control of tungsten versus dielectric removal

• TN-1030

  • Colloidal silica-based formulation

  • Provides higher selectivity while maintaining good planarization performance

  • Ideal for new node development and process evaluation

• TB-1000

  • Post-CMP buff polishing slurry

  • Helps further reduce defects and surface roughness

  • Suitable as the final step in tungsten CMP

Polysilicon Slurry – PS Series

Used for planarization and pattern refinement of polysilicon gates, resistors and related structures.

• PS-2003

  • Colloidal silica-based

  • Recommended for 10–20× dilution

  • Supports high-throughput volume production lines

• PS-2008

  • Recommended dilution range of 4–10×

  • Suitable for polysilicon processes requiring a balance of removal rate and surface quality

• PS-2100

  • Custom formulation developed for specific 12-inch fab process conditions

  • Can be further tuned for other lines or process steps as needed

• PS-2102

  • Colloidal silica slurry dedicated for polysilicon

  • Designed to balance removal rate, uniformity and defect performance

• PS-3000

  • Recommended for 10–20× dilution

  • Suitable as a standard slurry for high-productivity, multi-tool deployments

Ceria Slurry – CE Series

Mainly used for demanding oxide or specific dielectric CMP processes.

• CE-3000

  • Ceria-based slurry, recommended at around 4× dilution

  • Offers excellent chemical activity and polishing selectivity

  • Suitable for planarization of critical dielectric or high-k layers

• CE-5000

  • Provides a wide operation window with approx. 4–10× dilution

  • Flexible process tuning according to on-line conditions

  • Ideal for development phases involving new materials or new device structures

CMP Slurry – Typical Applications

• ILD / STI planarization in advanced logic processes

• Tungsten plug, metal gate and contact-hole polishing

• Polysilicon gate and resistive structure planarization

• Precision planarization of special dielectrics and high-k layers

• Other CMP processes requiring both high removal rate and low-defect performance